Boosted substrate/tub programming for flash memories

摘要: A boosted substrate tub/substrate floating gate memory cell programming process is described that applies a voltage to the or "tub" of NAND Flash array precharge channel carriers within cells prior applying high selected and coupling program program-inhibit cell(s) as desired. The use tub approach avoids requirement bitline and/or source line circuit design be able withstand carry voltages during allows reuse block erase circuits connected tub. This designed with smaller designs feature elements.