Channel carrier discharging in a NAND flash memory on an insulating substrate or layer
作者： Fumitaka Arai , Riichiro Shirota
DOI:
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摘要: A semiconductor memory device includes: a layer provided on an insulating substrate or layer; active areas each defined in the with film buried therein; and NAND cell units formed areas, unit including plurality of electrically rewritable non-volatile cells connected series, both ends being coupled to source line bit line, wherein has such carrier discharging mode as discharge channel carriers at least one line.
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