Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
作者： George Samachisa
DOI:
关键词: Electrical resistance and conductance 、 Electrical engineering 、 Voltage 、 Substrate (electronics) 、 Bit line 、 Materials science 、 Optoelectronics 、 Non-volatile memory
摘要: A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to voltage difference being applied across them. Memory are formed plurality planes positioned different distances above semiconductor substrate. Bit lines which the all connected oriented vertically from substrate and through planes.
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