Contemporaneous margin verification and memory access for memory cells in cross point memory arrays

摘要: Circuitry and methods for restoring data values in non-volatile memory are disclosed. An integrated circuit includes a access sensing configured to sense signal during read operation at least one two-terminal cross-point array. Each array plurality of cells. A the arrays can be fabricated over substrate vertically stacked on another. Further, include margin manager manage cells substantially operation, thereby providing contemporaneous determination operations. Stored from may have value stored restored (e.g., re-written same cell or another cell) if is not associated with hard programmed erased state).