High voltage switching circuitry for a cross-point array

摘要: Circuitry for generating voltage levels operative to perform data operations on non-volatile re-writeable memory arrays are disclosed. In some embodiments an integrated circuit includes a substrate and base layer formed the include active devices configured operate within first range. Further, can cross-point array above including re-writable two-terminal cells that operate, example, second range is greater than Conductive lines in electrically coupled with layer. The also X-line decoders Y-line other circuitry such as sense amps reading from cells, example.