Non-volatile memory having 3d array of read/write elements with efficient decoding of vertical bit lines and word lines
作者： Masaaki Higashitani , Luca Fasoli , George Samachisa , Roy Edwin Scheuerlein
DOI:
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摘要: A three-dimensional array of memory elements is formed across multiple layers planes positioned at different distances above a semiconductor substrate. The reversibly change level electrical conductance in response to voltage difference being applied them. includes two-dimensional pillar lines from the substrate through planes. first set acts as local bit for accessing together with an word on each plane. second connected lines. An metal switchable provide access and sets lines, thereby respectively array.
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