Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same

作者: Augustin Jinwoo Hong , Kang L. Wang , Ji-Young Kim , Yong-jik Park , Jeong-hee Han

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摘要: An integrated circuit device includes a transistor array having vertical stack of independently controllable gate electrodes therein. A first semiconductor channel region is provided, which extends on sidewall the electrodes. electrically insulating layer also between and Source drain regions are coupled to second ends region, respectively.

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