Non-volatile memory device having vertical structure and method of operating the same
作者： Won-Seok Cho , Jae-Hun Jeong , Sun-Il Shim , Jae-Hoon Jang , Han-soo Kim
DOI:
关键词:
摘要: A non-volatile memory device having a vertical structure includes NAND string structure. The plurality of cells, and at least one pair first selection transistors arranged to be adjacent end the cells. word lines are coupled cells string. line is commonly connected
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