Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems

摘要: A nonvolatile semiconductor memory which is configured to include a plurality of word lines disposed in row direction; bit column direction perpendicular the lines; cell transistors having charge storage layer, provided and an electronic condition transistor be controlled by one connected cell; first select transistors, each including gate electrode, selecting direction, arranged adjacent at end transistors; line electrodes transistors.