Memory structure and method for forming same
作者： Renrong Liang , Jing Wang , Libin Liu
DOI:
关键词: Substrate (printing) 、 Electronic engineering 、 Perpendicular 、 Single crystal 、 Oxide 、 Materials science 、 Semiconductor 、 Electrode 、 Layer (electronics) 、 Optoelectronics 、 Gate dielectric
摘要: A memory structure and a method for forming the same are provided. The comprises: substrate; plurality of channel structures formed on substrate, in which parallel with each other, comprises single crystal semiconductor layers oxide alternately stacked direction perpendicular to at least one is layer; gate matched structures, dielectric layer immediately adjacent electrode layer.
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