Integrated circuit self aligned 3D memory array and manufacturing method

摘要: A 3D memory device includes a plurality of ridge-shaped stacks, in the form multiple strips conductive material separated by insulating material, arranged as bit lines which can be coupled through decoding circuits to sense amplifiers. The have side surfaces on sides stacks. word row decoders, extends orthogonally over conform surface Memory elements lie multi-layer array interface regions at cross-points between stacks and lines. are programmable, like anti-fuses or charge trapping structures. is made using only two critical masks for layers.