Damascene conductor for 3D array
作者： Yen-Hao Shih , Erh-Kun Lai , Guanru Lee
DOI:
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摘要: For certain three dimensionally stacked memory devices, bit lines or word for cells are in spaced apart ridge like structures arranged to extend a first direction. In such structures, complementary wordlines lines, can be damascene features between the apart. The conductors formed using double patterned masks etch sub-lithographic sacrificial forming fill over and then removing leave trenches that act as molds fill. Then filled with conductor material. 3D array include dielectric charge trapping cells, which have high-K blocking layer, material comprises high work function
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