Stacked bit line dual word line nonvolatile memory

作者: Hsiang-Lan Lung

DOI:

关键词: OxideWord (computer architecture)DielectricElectrical engineeringOptoelectronicsNon-volatile memoryLayer (electronics)Electrical contactsLine (electrical engineering)Materials scienceBit line

摘要: An arrangement of nonvolatile memory devices, having at least one device level stacked by above a semiconductor substrate, each comprising an oxide layer substantially disposed plurality word lines the layer; bit via plugs in electrical contact with and, anti-fuse dielectric material on side walls beside and wall dielectrics.

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