作者: Hsiang-Lan Lung
DOI:
关键词: Oxide 、 Word (computer architecture) 、 Dielectric 、 Electrical engineering 、 Optoelectronics 、 Non-volatile memory 、 Layer (electronics) 、 Electrical contacts 、 Line (electrical engineering) 、 Materials science 、 Bit line
摘要: An arrangement of nonvolatile memory devices, having at least one device level stacked by above a semiconductor substrate, each comprising an oxide layer substantially disposed plurality word lines the layer; bit via plugs in electrical contact with and, anti-fuse dielectric material on side walls beside and wall dielectrics.