Structure and Method of Sub-Gate and Architectures Employing Bandgap Engineered SONOS Devices
作者： Hang-Ting Lue , Hao Ming Lien
DOI:
关键词: Programming method 、 Engineering 、 Electrical engineering 、 Gate oxide 、 Band gap 、 Overlay
摘要: A bandgap engineered SONOS device structure for design with various AND architectures to perform a source side injection programming method. The BE-SONOS comprises spacer oxide disposed between control gate overlaying an oxide-nitride-oxide-nitride-oxide stack and sub-gate oxide. In first embodiment, sub-gate-AND array architecture is constructed multiple columns of SONONOS devices lines diffusion bitlines. second sub-gate-inversion-bitline-AND inversion bitlines no
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