Inversion bit line, charge trapping non-volatile memory and method of operating same

摘要: A charge trapping memory device in which a field induced inversion layer is used to replace the source and drain implants. The cell are adapted store two bits, one on left side right of structure. positive threshold voltage erase state using negative gate Fowler Nordheim FN tunneling establishes balance condition at voltage. low current, side, hot electron injection programming method used.