Gate Formation Memory by Planarization
作者： Chun Chen , Mark T. Ramsbey , Shenqing Fang , David Matsumoto
DOI:
关键词:
摘要: Semiconductor devices and methods of producing the are disclosed. The formed by forming a gate structure on substrate. includes charge trapping dielectric between substrate first poly layer. A top is over layer sidewall side second such that portion vertical in contact with dielectric. can then be removed through, for instance, planarization.
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