Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
作者： Asanga H. Perera
DOI:
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摘要: A method of making a semiconductor structure includes forming select gate over substrate in an NVM portion and first protection layer logic portion. control storage are formed the portion, wherein gates have coplanar top surfaces. The charge is under gate, along adjacent sidewalls partially surface gate. second removed from leaving comprising high k dielectric metal
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