Precision creation of inter-gates insulator

摘要: An ONO-type inter-poly insulator is formed by depositing intrinsic silicon on an oxidation stop layer. In one embodiment, the layer a nitridated top surface of lower, and conductively-doped, polysilicon atomic deposition (ALD) used to precisely control thickness deposited, silicon. Heat oxidizing atmosphere are convert into thermally-grown, dioxide. The impedes deeper oxidation. A nitride additional oxide further deposited complete ONO structure before upper, formed. lower upper layers patterned respectively define floating gate (FG) (CG) electrically re-programmable memory cell. alternative after middle, defined, another way for example, ALD. second with two spaced apart, thereby provided.