Non-volatile memory (nvm) cell and high-k and metal gate transistor integration
作者： Frank K. Baker , Cheong Min Hong
DOI:
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摘要: A method of making a semiconductor device includes depositing layer polysilicon in non-volatile memory (NVM) region and logic substrate. The is patterned into gate the NVM while remains region. cell formed including removed substrate implanted to form well after formed. material deposited
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