Method of forming split-gate cell for non-volative memory devices

作者: Siow Lee Chwa , Yoke Leng Lim , Soh Yun Siah , Huajun Liu , Yu Chen

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摘要: Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming first on substrate, having an upper surface hard-mask covering surface, interpoly isolation layer side surfaces hard-mask, second one gate, with uppermost point below removing spacers exposed vertical surfaces, salicide gates.

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