Local sonos-type structure having two-piece gate and self-aligned ono and method for manufacturing the same

作者: Geum-Jong Bae , Jin-Hee Kim , Sung-Ho Kim , Nae-in Lee , Ki Chul Kim

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摘要: A local SONOS structure having a two-piece gate and self-aligned ONO includes: substrate; an on the first layer aligned with structure; insulator substrate aside second insulator. The layers are electrically connected together. Together, define at least 1-bit structure. corresponding method of manufacture providing forming insulator; connecting layers.

参考文章(16)
Kuo-Tung Chang, Ko-Min Chang, Cross-point eeprom memory array ,(1994)
Tyagamohan Gottipati, Robert A Huertas, Jeff P Erhardt, Tazrien Kamal, Clarence Ferguson, Angela T Hui, Jeffrey A Shields, Arvind Halliyal, Minh Van Ngo, Mark T Ramsbey, Ning Cheng, Jaeyong Park, UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing ,(2004)
James A. Cunningham, Richard A. Blanchard, Method and apparatus for providing an embedded flash-EEPROM technology ,(2000)
Robert B. Ogle, Nicholas H. Tripsas, Arvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Use of high-K dielectric material in modified ONO structure for semiconductor devices ,(2001)
T. Skotnicki, G. Ricci, J. Galvier, M. Jurczak, J. Martins, M. Paoli, B. Tormen, R. Pantel, C. Hernandez, I. Campidelli, E. Josse, Well-controlled, selectively under-etched Si/SiGe gates for RF and high performance CMOS symposium on vlsi technology. pp. 156- 157 ,(2000) , 10.1109/VLSIT.2000.852807
F. Scott Johnson, Donald S. Miles, Douglas T. Grider, J. J. Wortman, Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2 Journal of Electronic Materials. ,vol. 21, pp. 805- 810 ,(1992) , 10.1007/BF02665519