Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2
作者： F. Scott Johnson , Donald S. Miles , Douglas T. Grider , J. J. Wortman
DOI: 10.1007/BF02665519
关键词: Annealing (metallurgy) 、 Isotropic etching 、 Materials science 、 Mineralogy 、 Doping 、 Fabrication 、 Germanium 、 Buffered oxide etch 、 Optoelectronics 、 Silicon dioxide 、 Silicon
摘要: Polycrystalline SiGe etches that are selective to silicon dioxide as well needed for flexibility in device fabrication. A solution of NH4OH, H2O2, and H2O has been found selectivity etch polycrystalline silicon-germanium alloys over both dioxide. Optimum composition the was determined by maximizing rates films with several germanium compositions. The dependence on content, etching temperature, doping concentration reported. rate approximately exponentially proportional content. Etching be insensitive deposition method, annealing conditions films. In addition, leaves a smooth substrate surface after removal
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