Chemical Etching of Germanium with H3PO4–H2O2–H2O Solution

摘要: An H3PO4–H2O2–H2O solution is studied for possible use in the etching of germanium. The can be roughly classified into two ternary regions according to its characteristics: a (with low H2O2 concentration) and b high concentration). Solutions region provide reproducible smooth uniform surfaces. This used with SiO2 films photoresists as preferential mask material without dissolution or separation. It suitable processing germanium devices.