Experiments in MIS structure based on germanium and improvements of the interfacial properties

摘要: Abstract In the fast-moving electronics area, studies of germanium metal–insulator–semiconductor (MIS) devices are wide interest. For elaboration MIS structures, alumina films with 2000 A thickness were deposited on thermally grown oxide as well clean surfaces. The electrical measurements Al2O3/Ge structures indicate a high density states and consequently, bad electronic quality structures. On other hand, we show that presence layer GeO2 (30 A) between reduces states. This effect is due to protection surface during deposition film probably at improvement adhesion. To improve performances our optimize annealing conditions, have employed `forming-gas' [N2 : H2 = 85% : 15%] Al2O3:GeO2/Ge different temperatures. After 30 min T = 400°C, interface has been evaluated 5 × 1010 eV−1 cm−2.