Characteristics of deposited Eu2O3 film as a thick gate dielectric for silicon
作者： A. A. Dakhel
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摘要: Thin Eu 2 O 3 films were prepared on Si (P) substrates to form MOS devices. The oxide characterised by X-ray fluorescence (EDXRF) and diffraction (XRD). ac conduction mechanism the dielectric properties of layers studied at room temperature in range 290–420 K. We have also investigated effect oxide-crystal structure surface density states ( N ss ) insulator/semiconductor (I/S) interface. method capacitance-voltage C − V measurements was used determine . It concluded that mid-gap increases about 30 times when crystallises polycrystalline form. Also, trapped charges layer decreases 12 times crystallises. infrared studies inform us humidity incorporation film chemisorbed hydroxyl (OH) groups leave for T > 373 K.
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