Method and system for programming non-volatile memory with junctionless cells
作者： Hyoung Seub Rhie
DOI:
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摘要: A non-volatile memory system that has junctionless transistors is provided uses suppression of the formation an inversion-layer source and drain in to cause a discontinuous channel at least one string. The may include NAND flash cells composed transistors, set wordlines. During program operation, selected wordline wordlines biased voltage, voltage low enough suppress source/drains applied on word line side such isolation occurs thereby causing
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