Controlling Pass Voltages To Minimize Program Disturb In Charge-Trapping Memory

摘要: Techniques are provided for preventing program disturb of unselected memory cells during programming a selected cell in NAND string which includes continuous charge-trapping layer, either two-dimensional or three-dimensional configuration. In such string, regions between the can be inadvertently programmed as parasitic due to voltage and pass voltages on word lines. For cells, an upshift threshold avoided by providing higher adjacent later-programmed line than previously-programmed line. erased reduced progressively lowering The occur when lowest target data state complete programming.