NAND flash architecture with multi-level row decoding
作者： Jin-Ki Kim
DOI:
关键词:
摘要: A NAND flash memory device is disclosed. The includes a array defined as plurality of sectors. Row decoding performed in two levels. first level that applicable to all the This can be used select block, for example. second particular sector, page within block Read and program operations take place resolution while erase operation takes sector.
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