Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
作者： Gurtej Sandhu , Ren Earl , Roger Lee , Dennis Keller , Trung T. Doan
DOI:
关键词: Trenchless technology 、 Layer (electronics) 、 Materials science 、 Nanotechnology 、 Containment (computer programming) 、 Random access memory 、 Magnetoresistive random-access memory 、 Substrate (printing)
摘要: This invention pertains to a method of fabricating trenchless MRAM structure and the resultant structure. The has pinned layer formed within protective sidewalls over substrate. facilitate formation by self-aligning process.
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