作者: Herbert Goronkin , Saied N. Tehrani , Mark Durlam
DOI:
关键词:
摘要: A method of fabricating a plurality spaced apart submicron memory cells is disclosed, including the steps depositing magnetoresistive system on substrate formation, and patterning first layer material to form sidewalls, second, selectively etchable, material, etching second define spacers sidewalls system, using as mask, magnetic cells, electrical contacts cells.