Method of fabricating spaced apart submicron magnetic memory cells

作者: Herbert Goronkin , Saied N. Tehrani , Mark Durlam

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摘要: A method of fabricating a plurality spaced apart submicron memory cells is disclosed, including the steps depositing magnetoresistive system on substrate formation, and patterning first layer material to form sidewalls, second, selectively etchable, material, etching second define spacers sidewalls system, using as mask, magnetic cells, electrical contacts cells.

参考文章(2)
William F. Witcraft, Allan T. Hurst, Huang-Joung Chen, Lonny L. Berg, Tangshiun Yeh, Method of making integrated spacer for magnetoresistive RAM ,(1995)