Method of fabricating a magnetic random access memory
作者： Gloria Kerszykowski , Saied N. Tehrani , Kelly W. Kyler , X. Theodore Zhu , Eugene Chen
DOI:
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摘要: An improved and novel fabrication method for magnetoresistive random access memory (MRAM) is provided. MRAM device has elements circuitry managing the elements. The includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). fabricated first under CMOS process then magnetic (53, 54). A dielectric layer (40, 41) deposited circuit, trenches (42, 43) formed in layer. blanket (46), layers (48, 49) non-magnetic (50) sandwiched by layers, (41) trenches. Then, outside removed 54)
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