Self-aligned MRAM contact and method of fabrication
作者： Roger Lee
DOI:
关键词: Electronic engineering 、 Conductive materials 、 Materials science 、 Substrate (printing) 、 Layer (electronics) 、 Fabrication 、 Magnetoresistive random-access memory 、 Optoelectronics
摘要: A method of forming self-aligned MRAM contacts is disclosed. stacks including an upper layer a conductive material are formed over portions integrated circuitry. An insulating the substrate, with material. The subsequently chemically mechanically polished or etched, stopping on material, to expose which used as contacts.
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