Method of producing an integrated circuit arrangement with field-shaping electrical conductor

作者: Joachim Bangert

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摘要: An integrated circuit arrangement includes at least one electrical conductor that, when a current flows through it, produces magnetic field that acts on further part of the arrangement, wherein seen in cross section, has recess or depression, region reduced conductivity side facing part, order to influence which can be produced.

参考文章(15)
Gurtej Sandhu, Ren Earl, Roger Lee, Dennis Keller, Max F. Hineman, Trung T. Doan, Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme ,(2002)
Gloria Kerszykowski, Saied N. Tehrani, Kelly W. Kyler, X. Theodore Zhu, Eugene Chen, Mark Durlam, Jon M. Slaughter, Method of fabricating a magnetic random access memory ,(1999)
Thomas C. Anthony, Janice H. Nickel, Method for fabricating cladding layer in top conductor ,(2001)
Jon M. Slaughter, Eugene Y. Chen, Magnetic random access memory and fabricating method thereof ,(2000)
James A. Brug, Thomas C. Anthony, Janice Nickel, Lung T. Tran, Manoj K. Bhattacharyya, Method of fabricating an MRAM device including spin dependent tunneling junction memory cells ,(2000)
Ch.S. Roumenin, Magnetic sensors continue to advance towards perfection Sensors and Actuators A-physical. ,vol. 46, pp. 273- 279 ,(1995) , 10.1016/0924-4247(94)00904-V