Magnetic random access memory and method of fabricating thereof
作者： William C. Wille , Joachim Nuetzel , Xian Jay Ning
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摘要: A device structure and method for forming an interconnect in a magnetic random access memory (MRAM) device. In exemplary embodiment, the includes defining stack layer on lower metallization level, including non-ferromagnetic disposed between pair of ferromagnetic layers. conductive hardmask is defined over layer, selected portions are then removed, thereby creating array tunnel junction (MTJ) stacks. The MTJ stacks include remaining hardmask, wherein forms self aligning contact upper level subsequently formed above
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