Nonvolatile memory device and erasing method

作者: Seung-Won Lee

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摘要: Disclosed is an erasing method for a nonvolatile memory device that includes selected cells and erase-verifying the after increasing their threshold voltage by application of negative bulk bias voltage.

参考文章(3)
Tomoshi Futatsuya, Shinichi Kobayashi, Shinji Kawai, Yoshikazu Miyawaki, Nonvolatile semiconductor memory device capable of reducing memory array area ,(2000)