An optimal switching pattern for “SiC+Si” hybrid device based Voltage Source Converters
作者： Tiefu Zhao , Jiangbiao He
DOI: 10.1109/APEC.2015.7104512
关键词: Hybrid device 、 Voltage source 、 Materials science 、 Zero voltage switching 、 MOSFET 、 Electrical engineering 、 JFET 、 Thermal conduction 、 Converters 、 Semiconductor
摘要: In this paper, a new type of hybrid switching device with parallel connection SiC and Si active switches, such as “SiC JFET + IGBTs” or MOSFET IGBTs”, is introduced applied to 250kW back-to-back Voltage Source Converter (VSC). Considering the different speeds output characteristics devices in structure, novel optimal pattern proposed enable Zero Switching (ZVS) for IGBTs. This optimally utilizes better conduction lower loss based on instantaneous load current values, therefore significantly reduces semiconductor losses comparison conventional all-Si VSCs. Simulations converters namely, are carried out PLECS environment. Simulation results illustrate that overall efficiency VSC can be improved by up 4.8% if replaced “SiC+Si” pattern.
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