Static and dynamic behavior of paralleled IGBTs
作者： R. Letor
DOI: 10.1109/28.126748
关键词: Power (physics) 、 Power semiconductor device 、 Engineering 、 Electronic engineering 、 Electrical engineering 、 Bipolar junction transistor 、 Heat sink 、 Insulated-gate bipolar transistor
摘要: … IGBT’s with the same junction temperature (Tjl = Tj2). Fig. … the power MOSFET, and the parameters influencing the di / dt are the same parameters that influence the dI/ dt during turn on. …
sci-hub.se 参考文章(2)
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