Interface Electronic Differences Between Epitaxial Graphene Systems Grown on the Si and the C Face of SiC
作者： I. Deretzis , A. La Magna
DOI: 10.1007/978-3-642-20644-3_7
关键词: Graphene 、 Density functional theory 、 Materials science 、 Epitaxial graphene 、 Condensed matter physics 、 Surface reconstruction 、 Local-density approximation 、 Bar (unit) 、 Quantum Hall effect 、 Sic substrate
摘要: We use the local density approximation of functional theory to perform a comparative analysis between bonding interactions epitaxial graphene/SiC interface in case Si and C face growth [i.e. on SiC(0001) \(\hbox{SiC}(000\bar{1})\) surfaces respectively]. argue that when SiC substrate below graphene films reconstructs with no additional adatoms, observed electronic differences are outcome an interplay \(sp^2\) \(sp^3\) hybridization atoms. find strong preferential disposition towards for face, whereas scheme face. Notwithstanding purely quantitative, this mismatch is important reflects strength \(\pi\) bond C.
springer.com
sci-hub.st 参考文章(20)
U Starke, C Riedl, Epitaxial graphene on SiC(0001) and \mathrm {SiC}(000\bar {1}) : from surface reconstructions to carbon electronics Journal of Physics: Condensed Matter. ,vol. 21, pp. 134016- ,(2009) , 10.1088/0953-8984/21/13/134016
J Hass, W A de Heer, E H Conrad, The growth and morphology of epitaxial multilayer graphene Journal of Physics: Condensed Matter. ,vol. 20, pp. 323202- ,(2008) , 10.1088/0953-8984/20/32/323202
F. Varchon, R. Feng, J. Hass, X. Li, B. Ngoc Nguyen, C. Naud, P. Mallet, J.-Y. Veuillen, C. Berger, E. H. Conrad, L. Magaud, Electronic structure of epitaxial graphene layers on SIC : Effect of the substrate Physical Review Letters. ,vol. 99, pp. 126805- ,(2007) , 10.1103/PHYSREVLETT.99.126805
Xiaosong Wu, Yike Hu, Ming Ruan, Nerasoa K Madiomanana, John Hankinson, Mike Sprinkle, Claire Berger, Walt A. de Heer, Half integer quantum Hall effect in high mobility single layer epitaxial graphene Applied Physics Letters. ,vol. 95, pp. 223108- ,(2009) , 10.1063/1.3266524
J. Hass, J. E. Millán-Otoya, P. N. First, E. H. Conrad, Interface structure of epitaxial graphene grown on 4H-SiC(0001) Physical Review B. ,vol. 78, pp. 205424- ,(2008) , 10.1103/PHYSREVB.78.205424
S. Sonde, F. Giannazzo, C. Vecchio, R. Yakimova, E. Rimini, V. Raineri, Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas Applied Physics Letters. ,vol. 97, pp. 132101- ,(2010) , 10.1063/1.3489942
Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, Ph. Avouris, 100-GHz Transistors from Wafer-Scale Epitaxial Graphene Science. ,vol. 327, pp. 662- 662 ,(2010) , 10.1126/SCIENCE.1184289
A. La Magna, I. Deretzis, Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(0001¯) Applied Physics Letters. ,vol. 98, pp. 023113- ,(2011) , 10.1063/1.3543847
Alexander Mattausch, Oleg Pankratov, Ab initio study of graphene on SiC. Physical Review Letters. ,vol. 99, pp. 076802- ,(2007) , 10.1103/PHYSREVLETT.99.076802
Norman Troullier, José Luís Martins, Efficient pseudopotentials for plane-wave calculations Physical Review B. ,vol. 43, pp. 1993- 2006 ,(1991) , 10.1103/PHYSREVB.43.1993