The growth and morphology of epitaxial multilayer graphene
作者： J Hass , W A de Heer , E H Conrad
DOI: 10.1088/0953-8984/20/32/323202
关键词:
摘要: The electronic properties of epitaxial graphene grown on SiC have shown its potential as a viable candidate for post-CMOS electronics. However, progress in this field requires detailed understanding both the structure and growth graphene. To that end, review will focus current state research it relates to SiC. We pay particular attention similarity differences between two polar faces, (0001) , hexagonal Growth techniques, subsequent morphology graphene/SiC interface stacking order are reviewed discussed. Where possible relationship film also be reviewed.
harvard.edu
sci-hub.se 参考文章(151)
S. Nakanishi, H. Tokutaka, K. Nishimori, S. Kishida, N. Ishihara, The difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA Applied Surface Science. ,vol. 41, pp. 44- 48 ,(1990) , 10.1016/0169-4332(89)90030-5
V.M. Bermudez, Adsorption and co-adsorption of boron and oxygen on ordered α-SiC surfaces Applied Surface Science. ,vol. 84, pp. 45- 63 ,(1995) , 10.1016/0169-4332(94)00295-9
C. Riedl, U. Starke, J. Bernhardt, M. Franke, K. Heinz, Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces Physical Review B. ,vol. 76, pp. 245406- ,(2007) , 10.1103/PHYSREVB.76.245406
Katsumi Nishimori, Heizo Tokutaka, Shuuichi Nakanishi, Satoru Kishida, Naganori Ishihara, Off-Angle SiC(0001) Surface and Cu/SiC Interface Reaction Japanese Journal of Applied Physics. ,vol. 28, pp. L1345- L1348 ,(1989) , 10.1143/JJAP.28.L1345
T. Tsukamoto, M. Hirai, M. Kusaka, M. Iwami, T. Ozawa, T. Nagamura, T. Nakata, Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface Surface Science. ,vol. 371, pp. 316- 320 ,(1997) , 10.1016/S0039-6028(96)01008-4
Yossi Yayon, Taisuke Ohta, Victor W. Brar, Jessica L. McChesney, Eli Rotenberg, Karsten Horn, Michael. F. Crommie, Yuanbo Zhang, Aaron Bostwick, Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC Applied Physics Letters. ,vol. 91, pp. 122102- ,(2007) , 10.1063/1.2771084
Katsunori Wakabayashi, Mitsutaka Fujita, Hiroshi Ajiki, Manfred Sigrist, Electronic and magnetic properties of nanographite ribbons Physical Review B. ,vol. 59, pp. 8271- 8282 ,(1999) , 10.1103/PHYSREVB.59.8271
U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Heinz, STACKING TRANSFORMATION FROM HEXAGONAL TO CUBIC SIC INDUCED BY SURFACE RECONSTRUCTION : A SEED FOR HETEROSTRUCTURE GROWTH Physical Review Letters. ,vol. 82, pp. 2107- 2110 ,(1999) , 10.1103/PHYSREVLETT.82.2107
Z.Y Xie, C.H Wei, L.Y Li, Q.M Yu, J.H Edgar, Gaseous etching of 6H–SiC at relatively low temperatures Journal of Crystal Growth. ,vol. 217, pp. 115- 124 ,(2000) , 10.1016/S0022-0248(00)00480-2
L.I Johansson, P.-A Glans, N Hellgren, A core level and valence band photoemission study of 6H-SiC(0001̄) Surface Science. ,vol. 405, pp. 288- 297 ,(1998) , 10.1016/S0039-6028(98)00086-7