摘要: We report the patterned growth of SiC micro- and nanostructures in different shapes (e.g., ribbon dot) on Si wafer substrate using molecular beam epitaxy (MBE) subsequent selective conversion structures into graphene a small continuous wave (CW) laser under ambient condition. This work demonstrates feasibility fabricating arrays either SiC- or graphene-based for wide variety photonic-related applications. The obtained are studied with scanning electron microscopy (SEM), atomic force (AFM), transmission (TEM), Raman spectroscopy.