Gaseous etching of 6H–SiC at relatively low temperatures
作者： Z.Y Xie , C.H Wei , L.Y Li , Q.M Yu , J.H Edgar
DOI: 10.1016/S0022-0248(00)00480-2
关键词:
摘要: A comparison was made of on- and o!-axis 6H}SiC substrate surfaces etched in H 2 , atomic hydrogen, C 4 /H HCl/H at the relatively low-temperature range 1400}15003C. Well-de"ned terraces with three-bilayer height steps were obtained on on-axis substrates as low 14503C, reproducibility dependent history or cleanliness reactor. The e!ects adding HCl depended its concentration temperature; i.e. temperature high concentration, surface had a hillock pattern, while well-de"ned formed reverse conditions. etch rate hydrogen even (12003C), it produced pattern depressions. after etching original condition; polishing damage caused by applied load always resulted worse etching. O!-axis smoother, o!-cut step not changed . ( 2000 Published Elsevier Science B.V. All rights reserved.
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