The difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA

摘要: Abstract 6H-SiC has a hexagonal structure. The top most surfaces of (0001) and (000 1 ) are only covered with Si C atoms, respectively. former is called Si-rich surface the latter C-rich surface. These different polarities show characteristics. can also be observed by analytical techniques. Here, SiC were heated to several temperatures (RT-1100°C) for 10 min in an ultra-high vacuum (UHV) chamber. Then LEED (low energy electron diffraction) AES (Auger spectroscopy). 1000°C showed cleanest surfaces. C(KVV)/Si(LVV) peak (p-p) height ratio minimum value at all surfaces; on average it 0.26 face 0.38 face. patterns which (√3 × √3 - R30°) structure (3 3) After AES, ESCA experiments carried out these samples. C1s/Si2p area ratios 1.2 2.0 faces, However, after Ar-ion sputter etching, differences could not observed.