An x-ray photoelectron spectroscopy and work-function study of the Er/α-SiC(0001) interface
作者： S. Kennou
DOI: 10.1063/1.360576
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摘要: The adsorption of erbium on α‐SiC(0001) has been investigated by x‐ray photoelectron spectroscopy (XPS) and work‐function (WF) measurements. Deposition more than 15 A at room temperature gives a Schottky barrier height 1.40±0.1 eV accompanied shifts all substrate XPS peaks. WF value clean α‐SiC, 4.5 eV, is reduced to ∼2.9 after 5 Er deposition beyond which the begins develop. Upon annealing Er‐covered surface above 650 K increases reaches 1.80±0.1 900 due an interfacial reaction leads silicide formation interface.
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