Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
作者： R.F. Davis , G. Kelner , M. Shur , J.W. Palmour , J.A. Edmond
DOI: 10.1109/5.90132
关键词:
摘要: The deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts for fabrication of solid-state devices capable of operation at temperatures to 925 K are addressed. The results of several research programs in the United States, Japan and the Soviet Union, and the remaining challenges related to the development of silicon carbide for microelectronics are presented and discussed. It is concluded that the combination of alpha-SiC on alpha-SiC appears …
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