Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface

作者: T. Tsukamoto , M. Hirai , M. Kusaka , M. Iwami , T. Ozawa

DOI: 10.1016/S0039-6028(96)01008-4

关键词:

摘要: … We can see that depletion of Si atoms from the 4H-SiC(0001)Si surface begins at about 50C … 4H-SiC(0001) face. Therefore this structure can be concluded to be a V~ × V~ reconstruction…

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