Adsorption and co-adsorption of boron and oxygen on ordered α-SiC surfaces

摘要: Abstract Boron layers (grown by thermal decomposition of B10H14) on the (0001) Si- and C-terminated surfaces α-SiC have been studied using Auger electron energy-loss spectroscopies low-energy diffraction. Adsorption O2 clean B-adsorbed was also studied. Cleaning surface annealing in a flux Si vapor gives (3 × 3) structure which converts to 3 upon further vacuum. The consists an ordered layer chemisorbed termination layer, while involves arrangement vacancies. A (1 1) is observed for C-face. B Si-face eliminates reconstruction, produces complicated superstructure. Stronger interaction occurs leading incommensurately loosely termed “Si boride” due substantial changes SiL2,3VV KLL lineshapes. On C-face, disordered forms. B-free surfaces, room-temperature chemisorption slower C-face than Si-face, but rates O uptake become comparable with increasing coverage as way oxidation. For rapid, oxidation very slow. all three adsorbed suppresses has little or no effect