Analysis of Heat-Treated 6H-SiC(0001) Surface Using Scanning Tunneling Microscopy

摘要: A scanning tunneling microscopy in ultrahigh vacuum (UHV) has been used to study hexagonal (6H) silicon carbide (0001)Si face prepared by heat treatment. √3 x √3, 6 and 3 reconstructions were observed above 1100°C. With increasing heat-treatment temperature, surface structure changed drastically step heights decreased that of a double layer. The can be explained as the graphite layer on SiC proposed Kaplan, respectively.