Off-Angle SiC(0001) Surface and Cu/SiC Interface Reaction

作者： Katsumi Nishimori , Heizo Tokutaka , Shuuichi Nakanishi , Satoru Kishida , Naganori Ishihara

关键词: Surface reconstruction 、 Reaction interface 、 Analytical chemistry 、 Mineralogy 、 Inorganic compound 、 Auger electron spectroscopy 、 Silicide 、 Annealing (metallurgy) 、 Surface structure 、 Low-energy electron diffraction 、 Materials science 、 General Engineering 、 General Physics and Astronomy

摘要: An off-angle SiC(000)C surface showed an (1×1) LEED pattern. It was very different compared with the just angle surfaces of and SiC(0001)Si where they (3×3) (√3× √3)R30° patterns, respectively. A 5° can be cleaned by thermal annealing at 1000°C. Some silicide formations were observed from system Cu/SiC 200–300°C, but Au/SiC does not show any reactions.