Theory of electronic structure
作者： Douglas C. Allan , John D. Joannopoulos
DOI: 10.1007/3540128077_2
关键词: Dangling bond 、 Physics 、 Density of states 、 Impurity 、 Electronic structure 、 Semiconductor materials 、 Coherent potential approximation 、 Condensed matter physics 、 Bethe lattice
摘要: 2.1 Background Hydrogenated amorphous silicon presents a system in which a number of fundamental physical questions can be addressed. How is the doping [2.1] mechanism to be …
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