A new interpretation of the valence band density of states of amorphous group IV-semiconductors
作者： J. Treusch , B. Kramer
DOI: 10.1016/0038-1098(74)90209-9
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摘要: Abstract The disappearance of significant structures in the density states lower ( s -like) valence bands amorphous Group IV-semiconductors is explained as a consequence fluctuations second nearest neighbour positions which lead to an additional pseudopotential coefficient V (200) . Silicon treated example. An explanation proposed for different behaviour III-V compounds, where doublet structure band occurs also phases.
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